Abstract
Electrical characteristics of a Au/CeO2/Si structure have been measured by means of capacitance-voltage (C–V) and conductance-voltage (G–V) methods. Single crystalline and polycrystalline CeO2 films are grown on silicon substrates using electron-beam evaporation. MOS characteristics of the samples are classified by the crystallinity of the CeO2 films rather than by the orientation or conduction type of the Si substrate. Polycrystalline CeO2 film samples show a fine structure around the flat-band voltage in the C–V curves and injection-type hysteresis. It is clarified that the characteristics of the single crystalline CeO2 film sample are free from such undesirable properties caused by negative charge and carrier injection. Dielectric constant εr of the CeO2 films is estimated to be around 20, which is close to the bulk value (∼26).
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