Abstract
Electrical characteristics ofIn0.05Ga0.95N/Al0.07Ga0.93N andIn0.05Ga0.95N/GaN multiple quantum well (MQW)ultraviolet light-emitting diodes (UV-LEDs) at 400 nm wavelength aremeasured. It is found that for InGaN/AlGaN MQW LEDs, both idealityfactor and parallel resistance are similar to those of InGaN/GaN MQWLEDs, while series resistance is two times larger. It is suggested thatthe Al0.07Ga0.93N barrier layer did not change crystalquality and electrical characteristic of p-n junction either, butbrought larger series resistance. As a result, InGaN/AlGaN MQW LEDssuffer more serious thermal dissipation problem although they showhigher light output efficiency.
Published Version
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