Electrical characteristics of in‐plane gate logic devices

Abstract

AbstractLogic devices based on in‐plane gate (IPG) transistors are realized and their electrical characteristics are investigated. An IPG transistor connected in series with a resistance functions as a logic device. In this work, we present logic devices based on lateral gate structures using an additional IPG transistor as a variable resistance. The logic device is formed by an in‐plane double gate transistor connected in series with a self‐gating transistor as a variable resistance. It shows clear input‐output characteristics as a logic device. Either NAND or NOR operation can be achieved by changing the width of the self‐gating transistor. The operation of IPG logic devices depends on the resistance ratio of the two transistors. By using IPG transistors as variable resistances, the Hi/Low ratio is high enough for reliable logic operations. Furthermore, it is shown that the number of terminals and wiring are considerably reduced by using our IPG logic devices compared to logic devices based on CMOS transistors. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)