Abstract
Horizontally and vertically oriented few-layer graphenes have been synthesized directly on SiO2 coated Si substrates via thermal and hot-filament chemical vapor deposition, respectively. The effect of the direction of mass flow on the fabrication of graphene film is analysed and a plausible mechanism is proposed. The graphene/p-Si heterojunction is fabricated and tested for its potential in optoelectronic devices. Rectification behaviour is observed at the interface of graphene/p-Si under dark conditions. A dark current of 1.1 mA with an ideality factor of 1.5, in addition of a high rectification ratio of 15.99 at ± 0.5 V is found for the vertically oriented graphene/p-Si heterojunction.
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