Abstract
Erbium oxide film was deposited on Si substrate by reactive RF- sputtering from an erbium target for TaN and Al gate electrode. We found that Er2O3 dielectric with TaN electrode exhibits excellent electrical properties such as significantly a lower leakage current, higher capacitance value and thermal stability. This Er2O3 gate dielectric appears to be very promising for future ULSI devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
