Abstract
A thorough understanding of how electrons pass through point defects in carbon nanotubes is crucial for building carbon nanotube devices. We have generated point defects in the sidewalls of pristine carbon nanotubes via voltage pulses from a conducting atomic force microscope probe and studied the resulting changes in electron transport properties. We find that the incorporation of an oxidative defect leads to a variety of possible electrical signatures including sudden switching events, resonant scattering, and breaking of the symmetry between electron and hole transport. We discuss the relationship between these different electronic signatures and the chemical structure/charge state of the defect. Tunneling through a defect-induced Coulomb barrier is modeled with numerical Verlet integration of Schrodinger’s equation and compared with experimental results.
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