Abstract
600V LDMOS and LIGBT on thin SOI with improved field oxide (FOX) were designed and fabricated. The FOX structure was formed by a novel oxidation-etch-oxidation process, which took much less time to form, and with a low protrusion profile. The dependence of the off-state breakdown voltage on the implant dose in the drift region and oxide layer thickness under the field plate were simulated and measured. The on-state characteristics, temperature characteristics and capacitance characteristics were also discussed respectively.
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