Electrical characteristics and radiation detection performance of large-area photodiodes

Abstract

Photodiodes with the size of 2.3 × 2.3 cm2 are fabricated on n-type silicon wafers with high resistivity (>5 kΩ·cm) for physics applications. The photodiodes are fully depleted to collect signals produced by incoming particles. We measure the leakage currents and the capacitances of the photodiodes as functions of the reverse bias voltage. The photodiodes with leakage currents < 70 nA/cm2 are used to measure the signal-to-noise ratio (SNR) by using a 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Sciences (KIRAMS) and a 90Sr radioactive source. The SNRs are measured for the photodiode only and for photodiode coupled with a 5 mm thick plastic scintillator. The proton beam energy is controlled by using a degrader, and the pulse heights are measured for different energies of the proton beam. The radiation damage effect is also measured in an environment of 1.18 × 1010 protons/cm2. In this paper, we present not only the SNR measurements using the proton beam and the radioactive source but also the result of the radiation damage test.