Abstract
Bi2.9Pr0.9Ti3O12(BPT) and Bi2.9Pr0.9Ti2.97V0.03O12(BPTV) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Pr doping into Bi4Ti3O12 (BIT) result in a remarkable improvement in ferroelectric property. The remanent polarization (Pr) and coercive field (Ec) of the BPT film were 28 μC/cm2 and 80 kV/cm, respectively. Furthermore, V substitution improves the Pr value of the BTVT film up to 43 μC/cm2, which is much larger than that of the BPT film.
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