Electrical characteristics analysis of PIN detector with different doping concentration levels of N and P-type materials

Abstract

Present work involves the analysis of electrical characteristics of PIN photodetector with different doping concentration of P and N-type regions which serve as good ohmic contacts. It is possible to improve the basic electronic properties of a PIN photodetector with slight changes in doping levels. So, critical investigation of limit of heavy doping levels of N and P-type materials is very important. Hence this paper illustrates the importance of selecting the optimum value of doping levels when the doping level of intrinsic region remains fixed. Moreover, it provides the analysis of cathode current, recombination rate; electric field; spectral and transient responses of PIN detector to highlight the effect of doping concentration below or beyond the optimum value (1018) for the selected detector. For large photocurrent and fast switching operation there is a need to define the optimum level of the doping concentration of P and N-type layers in PIN detector. In this paper, the performance of Silicon based PIN photodiode’s intensity response within 100–1000 nm wavelength range is demonstrated. The present work will be beneficial in different applications such as detection of light in Ultraviolet range and for high-speed switching circuits.