Electrical Characterisation of P-Type CdxHg1−xTe Grown by Movpe

Abstract

ABSTRACTThe results of electrical characterisation of a series of MOVPE layers of CdxHg1−xTe (CMT) grown by the interdiffused multilayer process (IMP) are reported. It is shown that the properties of the CMT layers when grown as a “sandwich” between CdTe buffer and cap layers display classical p-type Hall effect curves. These have been modelled and the sensitivity of the fitting parameters are reported. It is shown that there is evidence of complex (“anomalous”) two-layer like behaviour in low x material which is not attributable to inversion behaviour.