Abstract
Metal-nitride-oxide semiconductor (MNOS), metal-oxide semiconductor (MOS) and metal-nitride semiconductor (MNS) devices have been fabricated on p-type 6H-SiC substrates without epitaxial layers. They have been characterised using high frequency capacitance-voltage (CV), conductance-voltage (GV) and current-voltage (IV) measurements. High frequency CV characteristics of SiC MNOS structures exhibit a capacitance-voltage behaviour that is very similar to high frequency CV characteristics of SiC MOS capacitors. Similar leakage current characteristics compared with p-type 6H-SiC MNS structures have been found for p-type 6H-SiC MNOS devices, but the SiO2/Si3N4 insulator current is lower, particularly for positive electric fields.
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