Abstract
Abstract To clarify a mechanism of electrical breakdown of magnetic tunneling junctions (MTJs), the change of characteristics by constant voltage stress was investigated. There were two breakdown processes. In the case of low applied voltage stress, tunnel resistance increased. On the other hand, if the applied voltage stress was higher, tunnel resistance decreased monotonously. The lifetime of MTJs with an inhomogeneous barrier was shorter than that of MTJs with a homogeneous barrier. In the breakdown process, the homogeneous barrier gradually became inhomogeneous, just before the breakdown. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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