Abstract
In this paper, electrical bistability of ITO/copper phthalocyanine (CuPc)/fullerene (C60)/Al structure for organic memory applications was studied. X-ray diffraction studies on the deposited film showed crystallinity with a major peak (100) for CuPc. It was seen that the stored conductivity state was rather stable in ITO/CuPc/C60/Al for use in organic memory cells. ON/OFF resistance ratio of around 105 was obtained for the CuPc/C60 device. Electrical bistability of this CuPc/C60 bilayer device was explained on the basis of filling of the traps and double injection.
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