Abstract
The dependence of the resistivity of doped polysilicon films on fabrication conditions is studied experimentally. The films are produced from a silane-germane-diborane or a silane-germane-phosphine gas mixture, being doped with germanium in combination with boron or phosphorus, respectively. The process parameters are identified that strongly influence the resistivity and temperature coefficient of resistance of the resulting films. They are (i) the volume ratio of germane to silane, (ii) the volume ratio of silane and germane to diborane and phosphine, (iii) substrate temperature, and (iv) annealing temperature. Common and distinctive features are identified in the patterns of behavior of resistivity observed in undoped and variously doped films. It is shown that film resistivity is to a large extent determined by grain size. It is also found that increasing the temperature of deposition or annealing makes for lower film resistivity.
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