Abstract
Abstract Bulk AgSbSe2 was prepared by melting the constituent elements in stoichiometric proportions. The ternary composition thus obtained was found to possess an NaCl-type structure. X-ray diffraction and electron microscopy techniques were used to obtain insight into the structural information of the sample. AgSbSe2 films were prepared by thermal evaporation under vacuum (10−5 Torr) on clean glass substrates. The room temperature deposited films were amorphous in nature and an amorphous-to-crystalline transition could be obtained by thermal annealing at 423 K. The degree of crystallinity increased with increasing temperature and film thickness. When thick films of this composition were evaporated thermally in vacuum two-phase films with AgSbSe2 as a major phase were formed. The effect of thermal annealing was studied using electron microscopy diffraction. The electrical resistivity, the carrier concentration and the temperature coefficient of resistance of AgSbSe2 deposited onto glass substrates have been studied as a function of thickness.
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