Abstract
ABSTRACTWe investigated electrical and structural properties of Ta-doped SnO2(TTO) films on anatase TiO2seed layers with various growth parameters of pulsed laser deposition. We found that anatase TiO2seed layers induced pseudo-epitaxial (100) growth of TTO films with enhanced mobility (μ) in a wide range of growth parameters. The highestμof 83 cm2V-1s-1[resistivity (ρ) of 2.8 × 10-4Ωcm] and the lowestρof 1.8 × 10-4Ωcm (μof 60 cm2V-1s-1) were obtained at a substrate temperature of 600 °C. Amorphization and (101)-preferred growth competed with (100) growth on the TiO2seed layer at low temperatures. Introducing sufficient process oxygen suppressed such unwanted film growth, resulting in improved transport properties.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
