Abstract
ABSTRACTWe investigated electrical and structural properties of Ta-doped SnO2(TTO) films on anatase TiO2seed layers with various growth parameters of pulsed laser deposition. We found that anatase TiO2seed layers induced pseudo-epitaxial (100) growth of TTO films with enhanced mobility (μ) in a wide range of growth parameters. The highestμof 83 cm2V-1s-1[resistivity (ρ) of 2.8 × 10-4Ωcm] and the lowestρof 1.8 × 10-4Ωcm (μof 60 cm2V-1s-1) were obtained at a substrate temperature of 600 °C. Amorphization and (101)-preferred growth competed with (100) growth on the TiO2seed layer at low temperatures. Introducing sufficient process oxygen suppressed such unwanted film growth, resulting in improved transport properties.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.