Electrical and optical properties of epitaxial transparent conductive BaCuTeF thin films deposited by pulsed laser deposition

Abstract

Transparent p-type conductive BaCuTeF thin films are reported. Epitaxial BaCuTeF films are obtained in situ by pulsed laser deposition in ultra-high vacuum and in Ar ambient up to 1 × 10 −3 Torr on single-crystal MgO (100) substrates above 500 °C. Nominally undoped films exhibit hole carrier mobilities of 4–8 cm 2/V s with a maximum conductivity of 167 S/cm. Polycrystalline films deposited under similar conditions on amorphous SiO 2 substrates have hole mobilities of 0.2 cm 2/V s and conductivities of 0.4–7 S/cm. The largest change in optical absorption occurs near 3 eV, with a weak feature near 2.4 eV in epitaxial films.