Electrical and structural properties of InxGa1−xN on GaAs

Abstract

InxGa1−xN (x=0.07–1.0) layers were grown on GaAs substrates by metalorganic molecular beam epitaxy. The films display strong n-type conductivity (n≳1020 cm−3) for a wide range of compositions. The use of an H2 rather than a He carrier gas produces a lower carrier concentration in the as-grown material. The InxGa1−xN is single crystal at low Ga concentrations with the lattice mismatch accommodated by a high density of stacking faults and microtwins. The InN layers contain only the cubic phase, while the ternaries contain both cubic and hexagonal phases.