Electrical and structural properties of cadmium selenide thin film transistors

Abstract

Stable thin film transistors based on cadmium senenide and silicon dioxide have been prepared. The degree of stability implies a decay of only 10% in drain current in 100 years of continuous d.c. operation. The decay is solely due to tunnelling of electrons into insulator traps and has a logarithmic time dependence. The devices have field effect mobilities up to 140 cm 2. Volt −1 sec −1, switching ratios in the range 10 5–10 6, and good reproducibility. The CdSe films contain the hexagonal structure and grain growth occurs during anneal. Grain size and distribution are reproducible from run to run.