Abstract
The stacked elemental layer (SEL) technique has been used to deposit thin films of CdTe, CdSe and CdSeTe. The deposited films are then annealed in air at various temperatures in the range 50–150°C for 60 minutes. The resultant films are then studied for their optoelectrical and structural properties in order to find the optimum conditions for their use in the field of photovoltaics. It is found that resulting films possess low values of resistivity and the optical band gap lies in the range suitable for photovoltaic use. Structural analysis indicates that films of CdSe and CdSeTe are a mixture of cubic and hexagonal phases whereas CdTe tends to crystallize in hexagonal structure.
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