Abstract
We report on the electrical and structural characterization of Mg-doped Al-rich p-type Al0.69Ga0.31N alloys on SiC substrate grown by metal organic chemical vapor deposition. The impact of growth conditions and dopant activation annealing conditions on the electrical conductivity was investigated. The most efficient activation was achieved by annealing in N2 gas at 1000°C for 3min in the presence of a SiO2 cap. The impact of p-GaN contact layer thickness was also studied. Higher growth temperature resulted in lower Mg incorporation, and for constant Mg concentration the resistivity increased with the increase in the growth temperature. Mg incorporation increased linearly with Mg effective flow. Transmission electron microscopy revealed the generation of vertical spike-like defects with increasing Mg doping. The resistivity also increased with the increase in Mg doping. A minimum resistivity of 10Ωcm was achieved at 670K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
