Abstract
A comparative study of dielectric properties of polysilicon oxide with silicon dioxide, grown on single crystal silicon, shows that the former is more conducting due to the presence of asperites at polysilicon/SiO2 interface. This paper also reports attempts made to improve the electrical properties of polysilicon oxide by investigating the effects of oxidation temperature, polysilicon deposition temperature and doping on current field characteristics of polyoxide. Higher doping and higher oxidation temperature yield smoother interface with higher breakdown voltages and lower leakage currents. Surface morphology of polyoxide under different process conditions is also studied.
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