Abstract
In this study, the electrical and structural characteristics of Gd2O3 gate dielectrics with an epitaxial Si3N4 interfacial layer grown on Si(111) were investigated. Compared with control Gd2O3 gate dielectrics deposited on HF-last treated Si (111), the Gd2O3 gate dielectrics with an epitaxial Si3N4 interfacial layer exhibited excellent electrical characteristics such as low leakage current density and low interface state density. These characteristics are due to a high-quality interfacial layer formation on Si. Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy were employed to analyze the structures of the gate dielectrics and interfacial layer. High-k gate dielectrics with an epitaxial Si3N4 interfacial layer have considerable potential for future use in sub-0.1 µm metal oxide semiconductor field-effect transistors (MOSFETs).
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