Abstract
In this letter, we present a novel gate oxidation process using D2O (deuterium oxide) as an oxidizing gas. The electrical and reliability characteristics of ultrathin gate oxide grown in D2O ambient have been investigated. Compared with a control oxide grown in H2O, a oxide grown in D2O exhibits a significant reduction of charge trapping and interface state generation. Based on a secondary ion mass spectroscopy (SIMS) analysis, we found a deuterium rich-layer at the Si/SiO2 interface. The improvement of electrical and reliability characteristics can be explained by the deuterium incorporation at the Si/SiO2 interface.
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