Abstract
In this work, three layers of transparent conductive films of WO3/Ag/WO3 (WAW) were deposited on a glass substrate by radio frequency (RF) magnetron sputtering. The thicknesses of WO3 (around 50~60 nm) and Ag (10~20 nm) films were mainly the changeable factors to achieve the optimal transparent conductivity attempting to replace the indium tin oxide (ITO) in cost consideration. The prepared films were cardinally subjected to physical and electrical characteristic analyses by means of X-ray diffraction analysis (XRD), field-emission scanning electron microscope (FE-SEM), and Keithley 4200 semiconductor parameter analyzer. The experimental results show as the thickness of the Ag layer increases from 10 nm to 20 nm, the resistance becomes smaller. While the thickness of the WO3 layer increases from 50 nm to 60 nm, its electrical resistance becomes larger.
Highlights
The transparent conductive film (TCF) offers versatile and cost-effective applications with a light transmittance of 80% or more in visible light range (400 to 800 nm) and low resistivity [1], sometimes treated as optical or electrical sensors [2,3,4]
Accompanying tungsten oxide (WO3 ), a semiconductor material with a large energy gap, it has a chance to form a transparent conductive film mainly composed of tungsten oxide and a silver metal layer in the middle
After cleaned in the sputtering the magnetron sputtering system wasthe step by stepsubstrate turned onwas for placed sputtering, following the chamber, standard operation procedures, and system was step by step turned on for sputtering, following the standard operation procedures, and
Summary
The transparent conductive film (TCF) offers versatile and cost-effective applications with a light transmittance of 80% or more in visible light range (400 to 800 nm) and low resistivity [1], sometimes treated as optical or electrical sensors [2,3,4]. Accompanying tungsten oxide (WO3 ), a semiconductor material with a large energy gap, it has a chance to form a transparent conductive film mainly composed of tungsten oxide and a silver metal layer in the middle. Oxygen vacancies are mainly formed because of the large number of tungsten oxides arranged, and the oxygen atoms in the structure are vacant due to defects in the material itself. In this case, the chemical formula of tungsten oxide should be. The Fermi level (EF ) of WO2 is generally in the conduction band, so that active electrons do not need much energy to look for the quantum state of the vacancy for jumping and inducing current conduction.
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