Abstract
The V2O5-doped Bi4Ti3O12 of Bi3.9Ti2.9V0.08O12 (BTV) ceramic was used as the target, and the BTV thin films were deposited on the Pt/Ti/SiO2/silicon substrate by radio frequency (RF) magnetron sputtering. The physical characteristics of BTV thin films were prepared under different conditions to find the optimal deposited parameters. The electrical characteristics of BTV thin films under the optimal sputtering and annealing parameters were prepared by using metal-ferroelectric-metal structure. Additionally, the remnant polarization of deposited BTV thin films would be improved by rapid thermal annealing process from our study, and 2Pr was about 40μC/cm2. Finally, the nonvolatile and non-destructive characteristics of one transistor-capacitor (1TC) structure FRAM device, using the annealed BTV films as the gate oxide, were be fabricated and discussed.
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