Abstract
This article presents as a potential candidate for dual metal complementary metal oxide semiconductor (CMOS) applications. The electrical characterization results of alloy indicates that the effective work function can be controlled to around on and is suitable for n-type MOS gate electrode application. The alloy forms a solid solution instead of an intermetallic compound. We report that the solid solution can achieve low work function values and is stable up to . X-ray diffraction results indicated only a single alloy phase. X-ray photoelectron spectroscopy analysis confirmed that no compound bonding formed within the alloy. Moreover, from Auger electron spectroscopy and Rutherford backscattering spectroscopy analysis, was found to be stable on under high-temperature anneals and no metal diffusion into substrate Si channel was detected. This indicates that is a good candidate for CMOS metal gate applications.
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