Abstract
This letter evaluates Ru and W capping layers for MoTa metal gate electrodes in MOS capacitor applications. The authors report that the oxygen diffusion from the capping layer plays an important role in determining the MoTa alloy effective work function value on SiO/sub 2/. A MoTa alloy metal gate with Ru capping exhibits stable effective work function up to 900/spl deg/C annealing but is not stable with W capping. Auger electron spectroscopy and Rutherford backscattering spectroscopy analyses show minimal oxygen diffusion into MoTa gate stacks with Ru capping while severe oxygen diffusion into the gate is observed with W capping metal after 900/spl deg/C annealing. Current-voltage analysis also demonstrates different barrier heights of MoTa on SiO/sub 2/ with Ru or W capping layer after 900/spl deg/C annealing, confirming the effective work function value change.
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