Abstract

The electrical and photovoltaic properties of Al-doped and undoped polyacetylene-Electrodag +502 Schottky barrier diodes have been examined. The current-voltage and capacitance-voltage characteristics at different temperatures were investigated. The dependence of short-circuit current and open-circuit voltage on the light intensity, temperature, concentration of acceptors and oxygen was also determined. The yield of light energy transformed into electrical energy around 0.1% is obtained in the best case (Voc approximately=650 mV, Jsc approximately=200 mu A cm-2, FF approximately=0.3 and Pin approximately=50 mW cm-2).

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