Abstract
The growth-temperature dependence of electrical and photoluminescent (PL) properties of GaSb and Al0.065Ga0.935Sb layers grown from Sb-rich solutions by liquid-phase epitaxy has been studied. The GaSb and AlGaSb epitaxial layers grown at 606 °C exhibit a low hole concentration of 4×1015 and 2×1016 cm−3, respectively. The low-temperature PL spectra of GaSb and AlGaSb is dominated by free-exciton transition and excitons bound to neutral acceptors. As the growth temperature is increased, both the residual hole concentration and the intensity of band A related to native lattice defects in GaSb and AlGaSb increase. The high-quality GaSb and AlGaSb epitaxial layers can be grown at low temperatures from Sb-rich solutions.
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