Abstract
Carbon-ions, which are expected as an amphoteric impurity, are implanted into ZnO bulk single crystals with a fluence of 1.5×1015cm−2. The carbon-ion implanted ZnO shows the n-type conductivity and the resistivity varies from 6×104Ωcm (for unimplanted samples) to 3×10−2Ωcm (for 800°C-annealed ones). The Rutherford backscattering (RBS) studies show the existence of the displaced zinc atoms. In photoluminescence (PL) measurements, the broad emission at 2.34eV observed in un-implanted and as-implanted samples is related to oxygen vacancy and zinc interstitial. After annealing, the weak PL-emission related to carbon donor is observed at 3.06eV, indicating that the donor level lies at ∼310meV below the conduction band. The carbon-ion implanted ZnO layer with the low resistivity achieved in the present study suggests the possibility of transparent conductive oxide.
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