Electrical and photoelectric properties of hybrid structures based on reduced graphene oxide and Pd-doped porous silicon

Abstract

This study suggests the Pd-doped porous silicon (PS)–reduced graphene oxide (rGO) hybrid structures to create a photosensitive field-effect transistor. I-V curves and switching characteristics of the created graphene field-effect transistors were analyzed. A significant effect of the supporting porous layer on the transfer of charge carriers in the graphene film was established. A decrease in internal resistance and an increase in the capacitance of the hybrid structures due to photogenerated charge carriers were found. The parameters of the equivalent circuit model of the Pd-doped PS–rGO under the influence of irradiation were determined based on the impedance spectra.