Abstract
The electrical and photoelectric properties of layered a-Si:H films obtained by cyclic plasmochemical deposition and the effect of thermal annealing on these properties have been studied. Unannealed films demonstrate high photosensitivity, with a photoconductivity to dark conductivity ratio of K=3.4×106. Increasing the annealing temperature causes the film photosensitivity to fall because of a considerable decrease in the photoconductivity and increase in the dark conductivity. For films annealed at temperatures above 500°C, the conductivity is the sum of the band conductivity and the hopping conductivity via states at the Fermi level.
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