Abstract
The electrical and photoresponse properties of the p-Si/P3HT/Al and p-Si/P3HT:MEH-PPV/Al organic devices have been investigated by current-voltage and capacitance-voltage characteristics. The diode parameters such as ideality factor, barrier height, rectification ratio, Richardson constant, and series resistance were determined from current-voltage characteristics at different temperatures. The diodes indicate a non-ideal current-voltage behavior due to the ideality factor being higher than unity due to the effect of series resistance and the presence of an interfacial layer. The interface state density Dit values of the P3HT and P3HT:MEH-PPV diodes vary from 1.829x10^1^0 to 3.825x10^1^1eV^-^1cm^-^2 and from 4.561x10^1^1 to 3.233x10^1^2eV^-^1cm^-^2, respectively. The photoconductivity properties of the diodes under various illuminations have been investigated. The photoconductivity parameters of the P3HT:MEH-PPV diode are higher than that of photoconductivity parameters of the P3HT diode.
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