Abstract
We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.
Highlights
Metal-semiconductor (MS) structures are important research tools in the characterization of new semiconductor materials, and at the same time, the fabrication of these structures plays a vital role in constructing some useful devices in technology [1,2,3]
It is observed that the zero-bias barrier height bo decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface
Most studies of Schottky barrier diodes (SBDs) formed on n-Indium phosphide (InP) were limited to the determination of the Schottky barrier height (SBH) at room temperature (RT) by measuring either the current-voltage (I-V) characteristics or the capacitance-voltage (C-V) characteristics of the diodes [6,7,8]
Summary
Metal-semiconductor (MS) structures are important research tools in the characterization of new semiconductor materials, and at the same time, the fabrication of these structures plays a vital role in constructing some useful devices in technology [1,2,3]. A serious limitation of InP Schottky barrier diodes is the low barrier height and large leakage currents. Low barrier height Schottky diodes of InP seem to be a good candidate for the application of zero-bias Schottky detector diodes [5]. Most studies of Schottky barrier diodes (SBDs) formed on n-InP were limited to the determination of the Schottky barrier height (SBH) at room temperature (RT) by measuring either the current-voltage (I-V) characteristics or the capacitance-voltage (C-V) characteristics of the diodes [6,7,8]. Analysis of the current-voltage (I-V) characteristics of the SBDs at room temperature only does not give detailed information about their conduction process or the nature of the barrier formed at the metal-semiconductor (M-S) interface. The strong dependence of both barrier height and the ideality factor on tempera-
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