Abstract
A scheme consisted of all-implantation processed planar silicon PIN Photodiode is fabricated and characterized to evaluate and optimise its potential for photo detection applications. Current Voltage, Capacitance Voltage and Photo-Simulated Internal Field Transient Characteristics are presented to check the compatibility of the design device with the CMOS manufacturing process routines, as well as the efficiency of the process. The effect of the variety of light intensities incident on the devices on the physical characteristic is also evaluated and analyzed. Presence of short-span photovoltaic effect is also witnessed in the transient analysis.
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Schedule a callMore From: Optik - International Journal for Light and Electron Optics
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