Abstract
We have studied transient irradiation effects on the optical and electrical responses of a laser diode. The influence of dose rate, ranging from 10/sup 9/ to 10/sup 12/ rad(Si)/s, has been investigated through a complete experimental study. Dose rate vulnerability of the laser diode has been observed. Electrical and optical transient responses are determined by the dose rate, the diode structure, and its operating point.
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