Abstract
Electrical properties (carrier concentration, mobility, resistivity) of zinc oxide thin films deposited on glass substrates by (LPCVD) has been studied. Thermal annealing in air showed that ideal annealing temperature is about 250°C. Films of copper oxide (CuO) and (CuO/ZnO) solar cell were prepared by vacuum deposition of copper films followed by thermal annealing. structural properties of the CuO films and I-V characteristics were studied upon thermal annealing and showed that a photosensitive (ZnO/CuO) heterojunction may be obtained by thermal treatment temperature about 500°C.
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