Electrical and Optical Properties of InSnZnO Thin Films

Abstract

as antistatic coatings, touch display panels, solar cells, flat panel displays, and optical coatings. We have studied the electrical and optical properties of InSnZnO thin films. The InSnZnO thin films were deposited on glass substrates by using the RF magnetron sputtering method and a target composition of In:Zn:Sn = 20:48:32. The thin films were post-annealed at 350 C for 1 hour in air. The resistivity, carrier concentration, and mobility of the InSnZnO thin films were measured by using the van der pauw method and Hall measurements. The optical properties of the InSnZnO thin films were investigated by using an UV spectrometer. After post-annealing at 350 C, the resistivity of the InSnZnO thin films was decreased, but the carrier concentration was increased, which showed that the annealing had play a crucial role in increasing the carrier concentration. The average optical transmittance of the InSnZnO thin films was greater than 80% in the visible light region. These results show that InSnZnO thin films may be useful for transparent thin-film semiconductors.