Abstract
Some optical and electrical properties in thin films of the system Ge- Se-Ti are studied as a function of the thallium contents. In order to determine the optical bandgap E g the transmission spectra of films of various thicknesses are analyzed. It is shown that the optical bandgap diminishes with the increase in the Tl content. From the transmission spectra, the relationship between the refractive index n and the wavelength at different Tl contents is derived. The increase in the refractive index with the increase in the Tl content is attributed to the increase in the valency density of the current carriers. The activation energy of films with different Tl content is determined by investigating the temperature dependence of conductivity.
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