Abstract
The electrical properties of the created doped and undoped wide-gap layers of metal oxides SnO 2, In 2 O 3 , ITO , CdO , MoO 3 were studied. Depending on technological factors. The optimal growth conditions for these semiconductor materials have been determined. The study of the electro physical and optical properties of the resulting oxide films confirmed the stability of the operational parameters of oxide materials SnO 2, In 2 O 3 , ITO , CdO , MoO 3 . The AFM method showed, along with the oxides SnO 2, In 2 O 3 , ITO , CdO , the oxide of pure MoO3 has The highest transmittance is in the visible region of the spectrum , where the absorption edge shifts toward higher wavelengths.
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