Abstract
In this paper, we report electrical and optical characteristics of the Schottky diodes fabricated by electrodeposition of nickel onto n -GaAs substrate from 0.125 M NiSO 4 + 0.25 M H 3 BO 3 + 0.25 M Na 2 SO 4 solution. The electrodeposition was performed at room temperature and at − 1.5 V vs. SCE. Electrical and optical properties were measured in the temperature range of 200–360 K. Dark and light current-voltage ( I-V ) characteristics were investigated. Ideality factor, n and zero-bias barrier height, ϕ b were calculated and found to be almost constant in this temperature range. For room temperature, these values were obtained as 1.05 and 0.70 eV, respectively. Illuminated I-V characteristics were also investigated and they showed that the fabricated device could operate in photovoltaic regime. Open-circuit voltage, V oc was found to be 0.24 V for the diode under 20 mW/cm 2 illumination. • Good light sensitivity is achieved by electrodeposition. • Room temperature n and ϕ b values are 1.05 and 0.70 eV, respectively. • Electrodeposited Ni/ n -GaAs Schottky diode can operate in photovoltaic regime.
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