Abstract
Tin oxide (SnO2) and nitrogen-doped tin oxide (N:SnO2) films were deposited using RF-magnetron sputtering. By adjusting the oxygen partial pressure from 0% to 3%, a series of samples were prepared. With the help of SEM, XRD, four-point probes and spectrophotometer, microstructure, electrical and optical properties were investigated. XRD patterns indicated that both SnO2 and N:SnO2 films were mainly rutile structure. The orientation of SnO2 films was transformed from the (101) under low oxygen pressure to the (110) under higher pressure. However, only (101) peak was observed in N:SnO2 films. The transmittance of the films was about 80% in the visible region. The optical band gap of SnO2 films increased from 4.02eV to 4.08eV as the oxygen partial pressure decreased from 3% to 0%. While for the N:SnO2 films, the optical band gap values increased from 3.60eV to 3.95eV. The electrical resistivity reached minimum values of 3.1×10−2Ω·cm and 5.9×10−3Ω·cm respectively for SnO2 and N:SnO2 films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
