Abstract
( Pb , La ) ( Zr , Ti ) O 3 (PLZT) thin films were grown on Pt∕Ti∕SiO2∕Si and fused quartz substrates by radio-frequency magnetron sputtering at 650°C. X-ray diffraction analysis shows that the PLZT films are polycrystalline with (100)-preferential orientation. The Al/PLZT/Pt capacitors have been fabricated and show good ferroelectric properties with the remanent polarization of 24.3μC∕cm2 and coercive field of 142kV∕cm. The leakage current density is only about 0.86×10−7A∕cm2 at 200kV∕cm. The energy gap Eg of the films is estimated to be about 3.54eV by optical transmittance measurements. Their fundamental optical constants are obtained by a Filmetrics F20 reflectance spectrometer (F20). These results show that the PLZT ferroelectric thin films are promising materials for optoelectronic devices.
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