Abstract
A detailed study on electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy is presented. There are two distinctive regions with non-homogeneous electrical and optical properties in N-face of GaN revealed by wet etching, Raman and cathodoluminescence. One region exclusively exhibited stronger donor–acceptor pair emission and higher carrier concentration due to impurity incorporation. A strong red-shift of near band edge emission of ∼24meV was also observed owing to additional carrier concentration. Furthermore, the activation energy difference of the etching process between the two regions is ∼0.12eV. The distinctive etching topography was probably due to the difference of surface potentials related to the level of carrier concentration in GaN.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
