Influence of dislocation density on photoluminescence intensity of GaN

Abstract

The influence of dislocation density on photoluminescence intensity is investigated experimentally and compared to a model. GaN samples were grown by molecular beam epitaxy and metal-organic chemical vapour deposition. Different growth parameters and thicknesses of the layers resulted in different dislocation densities. The threading dislocation density, measured by atomic force microscopy, scanning electron microscopy and X-ray diffraction, covered a range from 5×10 8 to 3×10 10 cm −2. Carrier concentration was measured by capacitance–voltage-, and Hall effect measurements and photoluminescence at 2 K was recorded. A model which accounts for the photoluminescence intensity as a function of dislocation density and carrier concentration in GaN is developed. The model shows good agreement with experimental results for typical GaN dislocation densities, 5×10 8–1×10 10 cm −2, and carrier concentrations 4×10 16–1×10 18 cm −3.