Abstract
III-V semiconductor nanowires are attractive building blocks for nanoscale electrical and optical applications due to their high electron mobility and direct band gap. Nanowire-based semiconductor devices, however, suffer from serious surface recombination loss resulting from a very high surfaceto-volume ratio. In this study, core-shell InAs-InP nanowires were grown to suppress carrier leakage from the nanowire core region, and their electrical and optical properties were compared to those of bare InAs nanowires. The nanowires were grown on Si (111) substrates by using a catalyst- and pattern-free growth method and a metalorganic chemical vapor deposition (MOCVD) system. The core-shell InAs-InP nanowires exhibited superior electrical and optical characteristics, indicating that the in-situ grown InP layer efficiently suppressesd carrier leakage from the InAs nanowire core despite the large lattice-mismatch strain between InP and InAs.
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