Electrical and Microstructural Characterization of Cu-Germanide Contacts Formed on p-Type Ge Substrate

Abstract

We have investigated the electrical and microstructural properties of Cu-germanide formed on p-type Ge substrate as a function of rapid thermal annealing (RTA) temperature. As increasing RTA temperatures, Cu films reacted with Ge and formed Cu-germanides. The Cu3Ge phase appears to be the dominant phase along with Cu5Ge2 phase at annealing temperatures of 500 and 600 °C. The sheet resistance and specific contact resistivity were investigated as a function of germanide formation temperature. A minimum specific contact resistivity value of 6.19´10-6 Ωcm2 is obtained after annealing at 400 °C associated with the formation of stoichiometric Cu3Ge. The sheet resistance and specific contact resistivity increased after rapid thermal at temperatures >500 °C indicated the degradation of the contact properties and could be associated with the formation of copper rich Cu5Ge2phase and the loss of structural integrity with increasing annealing temperature.