Electrical and mechanical properties of surface layers deposited on copper by the novel IBAD method

Abstract

A new system for ion beam assisted deposition (IBAD) of metal layers on solid surfaces is described. A new original procedure for IBAD modification of metal surface covers a few physical processes such as in situ ion implantation, metal layer deposition and ion beam mixing. A truncated cone serves as a sputter target. A beam of ions enters the cone along its axis, impinges onto the target surface and sputters material onto samples. The Rutherford backscattering method was used to measure deposited layer thickness. The results of the dependence of film thickness and homogeneity on the process parameters are discussed. It was shown that this technique is a promising one to modify electrical and mechanical properties of the copper contact surfaces.